ROHM SCT2H12NZGC11 N-channel MOSFET, 3.7 A, 1700 V SCT2H12NZ, 3+Tab-Pin TO-3PFM
Product Information
Maximum Continuous Drain Current:
3.7 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1700 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-3PFM
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.6V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
14 nC @ 18 V
Channel Type:
N
Length:
16mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
35 W
Series:
SCT2H12NZ
Maximum Gate Source Voltage:
-6 V, +22 V
Height:
21mm
Forward Diode Voltage:
4.3V
Maximum Drain Source Resistance:
1.5 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM SCT2H12NZGC11 N-channel MOSFET, 3.7 A, 1700 V SCT2H12NZ, 3+Tab-Pin TO-3PFM. You can also check on our website or by contacting our customer support team for further order details on ROHM SCT2H12NZGC11 N-channel MOSFET, 3.7 A, 1700 V SCT2H12NZ, 3+Tab-Pin TO-3PFM.
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Yes. We ship SCT2H12NZGC11 Internationally to many countries around the world.
This is N-channel MOSFET 3.7 A 1700 V SCT2H12NZ 3+Tab-Pin TO-3PFM manufactured by ROHM. The manufacturer part number is SCT2H12NZGC11. While 3.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 1700 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-3pfm. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.6v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 14 nc @ 18 v. The product is available in [Cannel Type] channel. Its accurate length is 16mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 35 w maximum power dissipation. The product sct2h12nz, is a highly preferred choice for users. It features a maximum gate source voltage of -6 v, +22 v. In addition, the height is 21mm. Its forward diode voltage is 4.3v . It provides up to 1.5 ω maximum drain source resistance.
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