ROHM RTQ045N03TR Dual N-channel MOSFET, 4.5 A, 30 V, 6-Pin TSMT

RTQ045N03TR ROHM  Dual N-channel MOSFET, 4.5 A, 30 V, 6-Pin TSMT
ROHM

Product Information

Category:
Power MOSFET
Dimensions:
3 x 1.8 x 0.95mm
Maximum Continuous Drain Current:
4.5 A
Width:
1.8mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
TSMT
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.6 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
540 pF @ 10 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
45 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
±12 V
Height:
0.95mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
43 mΩ
RoHs Compliant
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This is Dual N-channel MOSFET 4.5 A 30 V 6-Pin TSMT manufactured by ROHM. The manufacturer part number is RTQ045N03TR. It is of power mosfet category . The given dimensions of the product include 3 x 1.8 x 0.95mm. While 4.5 a of maximum continuous drain current. Furthermore, the product is 1.8mm wide. The product offers common drain transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of tsmt. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7.6 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 540 pf @ 10 v . Its accurate length is 3mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 45 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.25 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 0.95mm. In addition, it has a typical 13 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 43 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of ROHM RTQ045N03TR Dual N-channel MOSFET, 4.5 A, 30 V, 6-Pin TSMT. You can also check on our website or by contacting our customer support team for further order details on ROHM RTQ045N03TR Dual N-channel MOSFET, 4.5 A, 30 V, 6-Pin TSMT.
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