Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
12.2 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
3V
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
26 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2134 pF @ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
18 mΩ
This is Taiwan Semi Dual N-channel MOSFET 12.2 A 30 V 8-Pin SOIC manufactured by Taiwan Semiconductor. The manufacturer part number is TSM4944DCS RLG. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.5mm. While 12.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of soic. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 26 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2134 pf @ 15 v . Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 40 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. In addition, it has a typical 17 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 18 mω maximum drain source resistance.
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