Category:
Power MOSFET
Dimensions:
6.57 x 6.11 x 2.29mm
Maximum Continuous Drain Current:
70 A
Width:
6.11mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
15 mΩ
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V, 37 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2118 pF @ 30 V
Length:
6.57mm
Pin Count:
3 + Tab
Forward Transconductance:
40S
Typical Turn-Off Delay Time:
25.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Maximum Gate Source Voltage:
±20 V
Height:
2.29mm
Typical Turn-On Delay Time:
6.4 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
This is Taiwan Semi N-channel MOSFET 70 A 60 V 3 + Tab-Pin DPAK manufactured by Taiwan Semiconductor. The manufacturer part number is TSM120N06LCP ROG. It is of power mosfet category . The given dimensions of the product include 6.57 x 6.11 x 2.29mm. While 70 a of maximum continuous drain current. Furthermore, the product is 6.11mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. It provides up to 15 mω maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 4.5 v, 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2118 pf @ 30 v . Its accurate length is 6.57mm. It contains 3 + tab pins. The forward transconductance is 40s . Whereas, its typical turn-off delay time is about 25.6 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.29mm. In addition, it has a typical 6.4 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v .
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