Diodes Inc DMN26D0UFB4-7 N-channel MOSFET, 240 mA, 20 V, 3-Pin X2-DFN1006
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
10.5 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.05V
Height:
0.35mm
Width:
0.65mm
Length:
1.05mm
Maximum Drain Source Resistance:
10 Ω
Package Type:
X2-DFN1006
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
240 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship DMN26D0UFB4-7 Internationally to many countries around the world.
This is Diodes Inc N-channel MOSFET 240 mA 20 V 3-Pin X2-DFN1006 manufactured by DiodesZetex. The manufacturer part number is DMN26D0UFB4-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 10.5 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 350 mw maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.05v of maximum gate threshold voltage. In addition, the height is 0.35mm. Furthermore, the product is 0.65mm wide. Its accurate length is 1.05mm. It provides up to 10 ω maximum drain source resistance. The package is a sort of x2-dfn1006. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 240 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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