Diodes Inc DMG6601LVT-7 Dual N/P-channel MOSFET, 2 A, 4.5 A, 30 V, 6-Pin TSOT-26
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
12.3 nC @ 10 V, 13.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
3V
Height:
0.9mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
85 mΩ, 190 mΩ
Package Type:
TSOT-26
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2 A, 4.5 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc DMG6601LVT-7 Dual N/P-channel MOSFET, 2 A, 4.5 A, 30 V, 6-Pin TSOT-26. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMG6601LVT-7 Dual N/P-channel MOSFET, 2 A, 4.5 A, 30 V, 6-Pin TSOT-26.
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Yes. We ship DMG6601LVT-7 Internationally to many countries around the world.
This is Diodes Inc Dual N/P-channel MOSFET 2 A 4.5 A 30 V 6-Pin TSOT-26 manufactured by DiodesZetex. The manufacturer part number is DMG6601LVT-7. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 12.3 nc @ 10 v, 13.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.3 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 85 mω, 190 mω maximum drain source resistance. The package is a sort of tsot-26. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2 a, 4.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
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