Category:
Power MOSFET
Dimensions:
10.36 x 4.672 x 15.215mm
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.672mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
65.4 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4480 pF @ 40 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
44 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
146 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.215mm
Typical Turn-On Delay Time:
32 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5.3 mΩ
This is N-channel MOSFET 120 A 80 V PowerTrench 3-Pin TO-220 manufactured by ON Semiconductor. The manufacturer part number is FDP053N08B_F102. It is of power mosfet category . The given dimensions of the product include 10.36 x 4.672 x 15.215mm. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.672mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 65.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 4480 pf @ 40 v . Its accurate length is 10.36mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 44 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 146 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.215mm. In addition, it has a typical 32 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5.3 mω maximum drain source resistance.
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