Vishay SiHG24N65E-GE3 N-channel MOSFET, 24 A, 650 V E Series, 3-Pin TO-247AC
Product Information
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
81 nC @ 10 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Series:
E Series
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
20.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
145 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SiHG24N65E-GE3 N-channel MOSFET, 24 A, 650 V E Series, 3-Pin TO-247AC. You can also check on our website or by contacting our customer support team for further order details on Vishay SiHG24N65E-GE3 N-channel MOSFET, 24 A, 650 V E Series, 3-Pin TO-247AC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16723688 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16723688.
Yes. We ship SiHG24N65E-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 24 A 650 V E Series 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SiHG24N65E-GE3. While 24 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 81 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 250 w maximum power dissipation. The product e series, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 145 mω maximum drain source resistance.
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