Vishay SIA448DJ-T1-GE3 N-channel MOSFET, 12 A, 20 V, 6-Pin PowerPAK SC-70
Product Information
Dimensions:
1.7 x 1.7 x 0.8mm
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
PowerPAK SC-70
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
23 nC @ 8 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1380 pF @ 1 V
Length:
1.7mm
Pin Count:
6
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
19.2 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.8mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
32.4 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship SIA448DJ-T1-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 12 A 20 V 6-Pin PowerPAK SC-70 manufactured by Vishay. The manufacturer part number is SIA448DJ-T1-GE3. The given dimensions of the product include 1.7 x 1.7 x 0.8mm. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of powerpak sc-70. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 23 nc @ 8 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1380 pf @ 1 v . Its accurate length is 1.7mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 30 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 19.2 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.8mm. In addition, it has a typical 8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 32.4 mω maximum drain source resistance.
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