Vishay SI7288DP-T1-GE3 Dual N-channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO

Vishay

Product Information

Width:
5 mm
Maximum Drain Source Resistance Rds:
22mΩ
Automotive Standard:
No
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
10nC
Package Type:
SO-8
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
20A
Product Type:
Power MOSFET
Maximum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
40V
Channel Type:
Type N
Length:
5.99mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
15.6W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
TrenchFET
Height:
1.07mm
Minimum Operating Temperature:
150°C
RoHs Compliant
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This is Dual N-channel MOSFET 20 A 40 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SI7288DP-T1-GE3. Furthermore, the product is 5 mm wide. The product complies with automotive standard - no. The product offers isolated transistor configuration. The package is a sort of so-8. It consists of 2 elements per chip. power mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of -55°c. The product is available in [Cannel Type] channel. Its accurate length is 5.99mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is 150°c.

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ESD Control Selection Guide V1(Technical Reference)
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Si7288DP, Dual N-Channel 40V (D-S) MOSFET(Technical Reference)

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