This is N-channel MOSFET 2.6 A 20 V 3-Pin SOT-363 manufactured by Vishay. The manufacturer part number is SI2302DDS-T1-GE3. While 2.6 a of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.85v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 0.71 w maximum power dissipation. It features a maximum gate source voltage of ±8 v. In addition, the height is 1.02mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 75 mω maximum drain source resistance.
Datasheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is N-channel MOSFET 2.6 A 20 V 3-Pin SOT-363 manufactured by Vishay. The manufacturer part number is SI2302DDS-T1-GE3. While 2.6 a of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.85v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 0.71 w maximum power dissipation. It features a maximum gate source voltage of ±8 v. In addition, the height is 1.02mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 75 mω maximum drain source resistance.
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Don’t hesitate to ask questions for better clarification.