Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
1700 nC @ 15 V, 750 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.6mm
Width:
1.7mm
Length:
1.7mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SC-89-6
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
190 mA, 300 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
3 Ω, 8 Ω
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
This is Dual N/P-channel MOSFET 190 mA 300 mA 60 V 6-Pin SOT-523 manufactured by Vishay. The manufacturer part number is SI1029X-T1-GE3. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 1700 nc @ 15 v, 750 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 250 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.6mm. Furthermore, the product is 1.7mm wide. Its accurate length is 1.7mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sc-89-6. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 190 ma, 300 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 3 ω, 8 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
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