ON Semiconductor NTMFS4C09NT1G
Product Information
Maximum Continuous Drain Current:
52 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
SO-8FL
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22.2 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
25.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
8.5 mΩ
Manufacturer Standard Lead Time:
48 Weeks
Detailed Description:
N-Channel 30V 9A (Ta) 760mW (Ta), 25.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS4
Gate Charge (Qg) (Max) @ Vgs:
10.9nC @ 4.5V
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1252pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Customer Reference:
Power Dissipation (Max):
760mW (Ta), 25.5W (Tc)
Technology:
MOSFET (Metal Oxide)
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14542052 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14542052.
Yes. We ship NTMFS4C09NT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS4C09NT1G. While 52 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.1v of maximum gate threshold voltage. The package is a sort of so-8fl. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 25.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 8.5 mω maximum drain source resistance. It has typical 48 weeks of manufacturer standard lead time. It features n-channel 30v 9a (ta) 760mw (ta), 25.5w (tc) surface mount 5-dfn (5x6) (8-sofl). The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. Base Part Number: ntmfs4. The maximum gate charge and given voltages include 10.9nc @ 4.5v. It has a maximum Rds On and voltage of 5.8mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1252pf @ 15v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (ta). The product carries maximum power dissipation 760mw (ta), 25.5w (tc). This product use mosfet (metal oxide) technology.
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