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ON Semiconductor MCH3476-TL-H

MCH3476-TL-H ON Semiconductor
MCH3476-TL-H
ON Semiconductor

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.85mm
Width:
1.6mm
Length:
2mm
Maximum Drain Source Resistance:
310 mΩ
Package Type:
MCHP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MCH3476
Detailed Description:
N-Channel 20V 2A (Ta) 800mW (Ta) Surface Mount SC-70FL/MCPH3
Input Capacitance (Ciss) (Max) @ Vds:
128pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
125mOhm @ 1A, 4.5V
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
1.8nC @ 4.5V
Supplier Device Package:
SC-70FL/MCPH3
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
3-SMD, Flat Lead
Power Dissipation (Max):
800mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is MCH3476-TL-H. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1.8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 800 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 0.85mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2mm. It provides up to 310 mω maximum drain source resistance. The package is a sort of mchp. It consists of 1 elements per chip. While 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mch3476. It features n-channel 20v 2a (ta) 800mw (ta) surface mount sc-70fl/mcph3. The product's input capacitance at maximum includes 128pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It has a maximum Rds On and voltage of 125mohm @ 1a, 4.5v. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The maximum gate charge and given voltages include 1.8nc @ 4.5v. sc-70fl/mcph3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 3-smd, flat lead. The product carries maximum power dissipation 800mw (ta). The continuous current drain at 25°C is 2a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer Fab Transfer 25/Sep/2014(PCN Assembly/Origin)
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MCH3476(Datasheets)
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Raw Material Change 22/Jul/2015(PCN Design/Specification)
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Copper Wire Update 09/Apr/2015(PCN Design/Specification)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14532915 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14532915.
Yes. We ship MCH3476-TL-H Internationally to many countries around the world.