Maximum Continuous Drain Current:
6 A
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
±20 V dc, ±30 V ac
Height:
7.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
850 mΩ
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 800V 6A (Tc) 75W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
4.5V @ 600µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number:
FCU850
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1315pF @ 100V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Customer Reference:
Power Dissipation (Max):
75W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FCU850N80Z. While 6 a of maximum continuous drain current. Furthermore, the product is 2.5mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of ipak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 75 w maximum power dissipation. It features a maximum gate source voltage of ±20 v dc, ±30 v ac. In addition, the height is 7.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 850 mω maximum drain source resistance. It has typical 38 weeks of manufacturer standard lead time. It features n-channel 800v 6a (tc) 75w (tc) through hole i-pak. The typical Vgs (th) (max) of the product is 4.5v @ 600µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Base Part Number: fcu850. The maximum gate charge and given voltages include 29nc @ 10v. It has a maximum Rds On and voltage of 850mohm @ 3a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1315pf @ 100v. The product superfet® ii, is a highly preferred choice for users. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 6a (tc). The product carries maximum power dissipation 75w (tc). This product use mosfet (metal oxide) technology.
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