ON Semiconductor FCD620N60ZF
Product Information
Maximum Continuous Drain Current:
7.3 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
89 W
Series:
SuperFET II
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.22mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
620 mΩ
Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 600V 7.3A (Tc) 89W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FCD620
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Rds On (Max) @ Id, Vgs:
620mOhm @ 3.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1135pF @ 25V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Polar™
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7.3A (Tc)
Customer Reference:
Power Dissipation (Max):
89W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FCD620N60ZF Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FCD620N60ZF. While 7.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.39mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 20 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 89 w maximum power dissipation. The product superfet ii, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 6.22mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 620 mω maximum drain source resistance. It has typical 22 weeks of manufacturer standard lead time. It features n-channel 600v 7.3a (tc) 89w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fcd620. The maximum gate charge and given voltages include 36nc @ 10v. It has a maximum Rds On and voltage of 620mohm @ 3.6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1135pf @ 25v. The product hiperfet™, polar™, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7.3a (tc). The product carries maximum power dissipation 89w (tc). This product use mosfet (metal oxide) technology.
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