ROHM RTU002P02T106 P-channel MOSFET, 250 mA, 20 V, 3-Pin TSMT
Product Information
Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
2V
Height:
0.85mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
1.5 Ω
Package Type:
TSMT-3
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
250 mA
Transistor Material:
Si
Channel Type:
P
Pin Count:
3
Transistor Configuration:
Single
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You can order ROHM brand products with RTU002P02T106 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM RTU002P02T106 P-channel MOSFET, 250 mA, 20 V, 3-Pin TSMT. You can also check on our website or by contacting our customer support team for further order details on ROHM RTU002P02T106 P-channel MOSFET, 250 mA, 20 V, 3-Pin TSMT.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14128612 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14128612.
Yes. We ship RTU002P02T106 Internationally to many countries around the world.
This is P-channel MOSFET 250 mA 20 V 3-Pin TSMT manufactured by ROHM. The manufacturer part number is RTU002P02T106. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 0.85mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 1.5 ω maximum drain source resistance. The package is a sort of tsmt-3. It consists of 1 elements per chip. While 250 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It contains 3 pins. The product offers single transistor configuration.
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