Nexperia BSH201,215 P-channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23
Product Information
Maximum Continuous Drain Current:
300 mA
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
1.9V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 10 V
Channel Type:
P
Length:
3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
417 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.5 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship BSH201,215 Internationally to many countries around the world.
This is P-channel MOSFET 300 mA 60 V 3-Pin SOT-23 manufactured by Nexperia. The manufacturer part number is BSH201,215. While 300 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 1.9v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 417 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 2.5 ω maximum drain source resistance.
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