Infineon IRFU2405PBF N-channel MOSFET, 56 A, 55 V HEXFET, 3-Pin IPAK
Product Information
Maximum Continuous Drain Current:
56 A
Transistor Material:
Si
Width:
9.78mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
110 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ
Checking for live stock
FAQs
Yes. You can also search IRFU2405PBF on website for other similar products.
We accept all major payment methods for all products including ET14089520. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRFU2405PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRFU2405PBF N-channel MOSFET, 56 A, 55 V HEXFET, 3-Pin IPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFU2405PBF N-channel MOSFET, 56 A, 55 V HEXFET, 3-Pin IPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14089520 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14089520.
Yes. We ship IRFU2405PBF Internationally to many countries around the world.
This is N-channel MOSFET 56 A 55 V HEXFET 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IRFU2405PBF. While 56 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.78mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 70 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 110 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 16 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.