Diodes Inc DMT6016LFDF-7 N-channel MOSFET, 11.1 A, 60 V, 6-Pin U-DFN2020

DMT6016LFDF-7 Diodes Inc  N-channel MOSFET, 11.1 A, 60 V, 6-Pin U-DFN2020
DiodesZetex

Product Information

Maximum Continuous Drain Current:
11.1 A
Transistor Material:
Si
Width:
2.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
U-DFN2020
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
2.05mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.58mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
27 mΩ
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 11.1 A 60 V 6-Pin U-DFN2020 manufactured by DiodesZetex. The manufacturer part number is DMT6016LFDF-7. While 11.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.05mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of u-dfn2020. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.05mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.58mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 27 mω maximum drain source resistance.

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DMT6016LFDF, 60V N-Channel Enhancement Mode MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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