Category:
Power MOSFET
Dimensions:
2.9 x 1.6 x 0.9mm
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
TSOT-26
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15.4 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1610 pF @ -10 V
Length:
2.9mm
Pin Count:
6
Typical Turn-Off Delay Time:
94 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.9mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
62 mΩ
This is Diodes Inc P-channel MOSFET 6 A 20 V 6-Pin TSOT-26 manufactured by DiodesZetex. The manufacturer part number is DMP2035UVT-7. It is of power mosfet category . The given dimensions of the product include 2.9 x 1.6 x 0.9mm. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of tsot-26. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1610 pf @ -10 v . Its accurate length is 2.9mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 94 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.9mm. In addition, it has a typical 17 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 62 mω maximum drain source resistance.
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