Vishay SiHB28N60EF-GE3 N-channel MOSFET, 28 A, 600 V EF Series, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
250 W
Series:
EF Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
123 mΩ
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FAQs
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You can order Vishay brand products with SiHB28N60EF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SiHB28N60EF-GE3 N-channel MOSFET, 28 A, 600 V EF Series, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Vishay SiHB28N60EF-GE3 N-channel MOSFET, 28 A, 600 V EF Series, 3-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13977417 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13977417.
Yes. We ship SiHB28N60EF-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 28 A 600 V EF Series 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SiHB28N60EF-GE3. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 80 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 250 w maximum power dissipation. The product ef series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 123 mω maximum drain source resistance.
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