Wolfspeed CAS120M12BM2 Dual N-channel SiC MOSFET, 193 A, 1200 V, 7-Pin
Product Information
Maximum Continuous Drain Current:
193 A
Transistor Material:
SiC
Width:
61.4mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
Half Bridge
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
378 nC @ 20 V
Channel Type:
N
Length:
106.4mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Maximum Power Dissipation:
925 W
Maximum Gate Source Voltage:
-10 V, +25 V
Height:
30mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
2.4V
Maximum Drain Source Resistance:
30 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Wolfspeed CAS120M12BM2 Dual N-channel SiC MOSFET, 193 A, 1200 V, 7-Pin. You can also check on our website or by contacting our customer support team for further order details on Wolfspeed CAS120M12BM2 Dual N-channel SiC MOSFET, 193 A, 1200 V, 7-Pin.
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Yes. We ship CAS120M12BM2 Internationally to many countries around the world.
This is Dual N-channel SiC MOSFET 193 A 1200 V 7-Pin manufactured by Wolfspeed. The manufacturer part number is CAS120M12BM2. While 193 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 61.4mm wide. The product offers series transistor configuration. It has a maximum of 1200 v drain source voltage. The product carries 2.6v of maximum gate threshold voltage. The package is a sort of half bridge. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 378 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 106.4mm. It contains 7 pins. The product carries enhancement channel mode. The product is available in screw mount configuration. Provides up to 925 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +25 v. In addition, the height is 30mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 2.4v . It provides up to 30 mω maximum drain source resistance.
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