Wolfspeed C2M0080120D N-channel SiC MOSFET, 31 A, 1200 V, 3-Pin TO-247

Wolfspeed

Product Information

Maximum Drain Source Voltage:
1200 V
Typical Gate Charge @ Vgs:
49.2 nC @ 20 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Maximum Gate Source Voltage:
-10 V, +25 V
Maximum Gate Threshold Voltage:
3.2V
Channel Type:
N
Width:
5.21mm
Length:
16.13mm
Minimum Gate Threshold Voltage:
1.7V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
31 A
Transistor Material:
SiC
Maximum Drain Source Resistance:
208 mΩ
Height:
21.1mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel SiC MOSFET 31 A 1200 V 3-Pin TO-247 manufactured by Wolfspeed. The manufacturer part number is C2M0080120D. It has a maximum of 1200 v drain source voltage. With a typical gate charge at Vgs includes 49.2 nc @ 20 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 208 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +25 v. The product carries 3.2v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 5.21mm wide. Its accurate length is 16.13mm. Whereas its minimum gate threshold voltage includes 1.7v. The package is a sort of to-247. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 31 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It provides up to 208 mω maximum drain source resistance. In addition, the height is 21.1mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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C2M0080120D Silicon Carbide Power MOSFET Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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