Maximum Continuous Drain Current:
60 A
Transistor Material:
SiC
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
115 nC @ 20 V, 115 nC @ 5 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
330 W
Maximum Gate Source Voltage:
-5 V, +20 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
3.3V
Maximum Drain Source Resistance:
52 mΩ
This is N-chan SiC MOSFET 1200V 90A TO247 manufactured by Wolfspeed. The manufacturer part number is C2M0040120D. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 1200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 115 nc @ 20 v, 115 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 330 w maximum power dissipation. It features a maximum gate source voltage of -5 v, +20 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 3.3v . It provides up to 52 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.