Maximum Continuous Drain Current:
60 A
Transistor Material:
SiC
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
115 nC @ 20 V, 115 nC @ 5 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
330 W
Maximum Gate Source Voltage:
-5 V, +20 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
3.3V
Maximum Drain Source Resistance:
52 mΩ
