Diodes Inc DMG1012T-7 N-channel MOSFET, 630 mA, 20 V, 3-Pin SOT-523
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.737 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1V
Height:
0.8mm
Width:
0.85mm
Length:
1.7mm
Maximum Drain Source Resistance:
700 mΩ
Package Type:
SOT-523 (SC-89)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
630 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is Diodes Inc N-channel MOSFET 630 mA 20 V 3-Pin SOT-523 manufactured by DiodesZetex. The manufacturer part number is DMG1012T-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 0.737 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 280 mw maximum power dissipation. It features a maximum gate source voltage of -6 v, +6 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 0.85mm wide. Its accurate length is 1.7mm. It provides up to 700 mω maximum drain source resistance. The package is a sort of sot-523 (sc-89). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 630 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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