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Vishay SIHG20N50E-GE3 N-channel MOSFET, 19 A, 500 V E Series, 3-Pin TO-247AC

SIHG20N50E-GE3 Vishay  N-channel MOSFET, 19 A, 500 V E Series, 3-Pin TO-247AC
SIHG20N50E-GE3
Vishay

Product Information

Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
179 W
Series:
E Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
180 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 19 A 500 V E Series 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SIHG20N50E-GE3. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 179 w maximum power dissipation. The product e series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 180 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. You can also search SIHG20N50E-GE3 on website for other similar products.
We accept all major payment methods for all products including ET13923050. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIHG20N50E-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SIHG20N50E-GE3 N-channel MOSFET, 19 A, 500 V E Series, 3-Pin TO-247AC. You can also check on our website or by contacting our customer support team for further order details on Vishay SIHG20N50E-GE3 N-channel MOSFET, 19 A, 500 V E Series, 3-Pin TO-247AC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13923050 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13923050.
Yes. We ship SIHG20N50E-GE3 Internationally to many countries around the world.