Vishay SIHD3N50D-GE3 N-channel MOSFET, 3 A, 500 V D Series, 3-Pin DPAK
Product Information
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
104 W
Series:
D Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.38mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.2 Ω
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FAQs
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You can order Vishay brand products with SIHD3N50D-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SIHD3N50D-GE3 N-channel MOSFET, 3 A, 500 V D Series, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Vishay SIHD3N50D-GE3 N-channel MOSFET, 3 A, 500 V D Series, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13883937 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13883937.
Yes. We ship SIHD3N50D-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 3 A 500 V D Series 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SIHD3N50D-GE3. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 104 w maximum power dissipation. The product d series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.38mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.2 ω maximum drain source resistance.
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