Vishay SIHD3N50D-GE3 N-channel MOSFET, 3 A, 500 V D Series, 3-Pin DPAK

Vishay

Product Information

Maximum Drain Source Voltage:
500 V
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
104 W
Series:
D Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
3V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Maximum Drain Source Resistance:
3.2 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 3 A 500 V D Series 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SIHD3N50D-GE3. It has a maximum of 500 v drain source voltage. With a typical gate charge at Vgs includes 6 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 104 w maximum power dissipation. The product d series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 3.2 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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SiHD3N50D, D Series Power MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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