Infineon IRLB4030PBF N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-220AB
Product Information
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
87 nC @ 4.5 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
370 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
9.02mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4 mΩ
Checking for live stock
FAQs
Yes. You can also search IRLB4030PBF on website for other similar products.
We accept all major payment methods for all products including ET13874842. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRLB4030PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRLB4030PBF N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on Infineon IRLB4030PBF N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-220AB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13874842 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13874842.
Yes. We ship IRLB4030PBF Internationally to many countries around the world.
This is N-channel MOSFET 180 A 100 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRLB4030PBF. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 87 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 370 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 9.02mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.