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This is N-channel MOSFET 33 A 100 V HEXFET 3-Pin I2PAK manufactured by Infineon. The manufacturer part number is IRF540NLPBF. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 71 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 130 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.65mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. It provides up to 44 mω maximum drain source resistance. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 33 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0.000
