Toshiba 2SK3564,S5Q(J N-channel MOSFET, 3 A, 900 V 2SK, 3-Pin SC-67
Product Information
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SC-67
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Series:
2SK
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15mm
Forward Diode Voltage:
1.9V
Maximum Drain Source Resistance:
4.3 Ω
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Yes. We ship 2SK3564,S5Q(J Internationally to many countries around the world.
This is N-channel MOSFET 3 A 900 V 2SK 3-Pin SC-67 manufactured by Toshiba. The manufacturer part number is 2SK3564,S5Q(J. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of sc-67. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product 2sk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15mm. Its forward diode voltage is 1.9v . It provides up to 4.3 ω maximum drain source resistance.
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