ON Semiconductor NTGS3130NT1G
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
13.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.1 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.4V
Height:
1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
24 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.6 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
46 Weeks
Detailed Description:
N-Channel 20V 4.23A (Ta) 600mW (Ta) Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
NTGS3130
Gate Charge (Qg) (Max) @ Vgs:
20.3nC @ 4.5V
Rds On (Max) @ Id, Vgs:
24mOhm @ 5.6A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
935pF @ 16V
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.23A (Ta)
Customer Reference:
Power Dissipation (Max):
600mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock
FAQs
Yes. You can also search NTGS3130NT1G on website for other similar products.
We accept all major payment methods for all products including ET12208089. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with NTGS3130NT1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTGS3130NT1G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTGS3130NT1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12208089 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12208089.
Yes. We ship NTGS3130NT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTGS3130NT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 13.2 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.1 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1.4v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. It provides up to 24 mω maximum drain source resistance. The package is a sort of tsop. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration. It has typical 46 weeks of manufacturer standard lead time. It features n-channel 20v 4.23a (ta) 600mw (ta) surface mount 6-tsop. The typical Vgs (th) (max) of the product is 1.4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: ntgs3130. The maximum gate charge and given voltages include 20.3nc @ 4.5v. It has a maximum Rds On and voltage of 24mohm @ 5.6a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 935pf @ 16v. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4.23a (ta). The product carries maximum power dissipation 600mw (ta). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.