ON Semiconductor NTMFS5H600NLT1G
Product Information
Maximum Continuous Drain Current:
250 A
Width:
5.1mm
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
89 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
4 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
160 W
Series:
NTMFS5H600NL
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.7 mΩ
Manufacturer Standard Lead Time:
35 Weeks
Detailed Description:
N-Channel 60V 35A (Ta), 250A (Tc) 3.3W (Ta), 160W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS5
Gate Charge (Qg) (Max) @ Vgs:
89nC @ 10V
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6680pF @ 30V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
35A (Ta), 250A (Tc)
Customer Reference:
Power Dissipation (Max):
3.3W (Ta), 160W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship NTMFS5H600NLT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS5H600NLT1G. While 250 a of maximum continuous drain current. Furthermore, the product is 5.1mm wide. It has a maximum of 60 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of dfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 89 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.1mm. It contains 4 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 160 w maximum power dissipation. The product ntmfs5h600nl, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.7 mω maximum drain source resistance. It has typical 35 weeks of manufacturer standard lead time. It features n-channel 60v 35a (ta), 250a (tc) 3.3w (ta), 160w (tc) surface mount 5-dfn (5x6) (8-sofl). The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. Base Part Number: ntmfs5. The maximum gate charge and given voltages include 89nc @ 10v. It has a maximum Rds On and voltage of 1.3mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6680pf @ 30v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 35a (ta), 250a (tc). The product carries maximum power dissipation 3.3w (ta), 160w (tc). This product use mosfet (metal oxide) technology.
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