Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
35 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
2.3mm
Width:
5.5mm
Length:
6.5mm
Maximum Drain Source Resistance:
130 mΩ
Package Type:
TP-FA
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
SFT1445
Detailed Description:
N-Channel 100V 17A (Ta) 1W (Ta), 35W (Tc) Surface Mount TP-FA
Input Capacitance (Ciss) (Max) @ Vds:
1030pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Rds On (Max) @ Id, Vgs:
111mOhm @ 8.5A, 10V
Supplier Device Package:
TP-FA
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
1W (Ta), 35W (Tc)
Current - Continuous Drain (Id) @ 25°C:
17A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
