ON Semiconductor ECH8695R-TL-W
Product Information
Maximum Drain Source Voltage:
24 V
Typical Gate Charge @ Vgs:
10 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
-12.5 V, +12.5 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
13.3 mΩ
Package Type:
ECH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Common Drain
FET Feature:
Logic Level Gate, 2.5V Drive
Base Part Number:
ECH8695
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 24V 11A 1.4W Surface Mount SOT-28FL/ECH8
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Drain to Source Voltage (Vdss):
24V
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
9.1mOhm @ 5A, 4.5V
Supplier Device Package:
SOT-28FL/ECH8
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual) Common Drain
Customer Reference:
Power - Max:
1.4W
Current - Continuous Drain (Id) @ 25°C:
11A
Manufacturer:
ON Semiconductor
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11703863 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11703863.
Yes. We ship ECH8695R-TL-W Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is ECH8695R-TL-W. It has a maximum of 24 v drain source voltage. With a typical gate charge at Vgs includes 10 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.4 w maximum power dissipation. It features a maximum gate source voltage of -12.5 v, +12.5 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 2.3mm wide. Its accurate length is 2.9mm. It provides up to 13.3 mω maximum drain source resistance. The package is a sort of ech. It consists of 2 elements per chip. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers common drain transistor configuration. The FET features of the product include logic level gate, 2.5v drive. Base Part Number: ech8695. It features mosfet array 2 n-channel (dual) common drain 24v 11a 1.4w surface mount sot-28fl/ech8. The maximum gate charge and given voltages include 10nc @ 4.5v. The typical Vgs (th) (max) of the product is 1.3v @ 1ma. The product has a 24v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. It has a maximum Rds On and voltage of 9.1mohm @ 5a, 4.5v. sot-28fl/ech8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual) common drain. The maximum power of the product is 1.4w. The continuous current drain at 25°C is 11a. The on semiconductor's product offers user-desired applications.
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