ON Semiconductor NTJS3157NT1G
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
6.9 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
85 mΩ
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Base Part Number:
NTJS31
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 4.5V
Rds On (Max) @ Id, Vgs:
60mOhm @ 4A, 4.5V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
500pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-88/SC70-6/SOT-363
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Customer Reference:
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTJS3157NT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTJS3157NT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 6.9 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 85 mω maximum drain source resistance. The package is a sort of sot-363 (sc-88). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration. It has typical 20 weeks of manufacturer standard lead time. It features n-channel 20v 3.2a (ta) 1w (ta) surface mount sc-88/sc70-6/sot-363. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. Base Part Number: ntjs31. The maximum gate charge and given voltages include 15nc @ 4.5v. It has a maximum Rds On and voltage of 60mohm @ 4a, 4.5v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 500pf @ 10v. sc-88/sc70-6/sot-363 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.2a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology.
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