Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
15.25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
110 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.7 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Base Part Number:
NTGS4111
Detailed Description:
P-Channel 30V 2.6A (Ta) 630mW (Ta) Surface Mount 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.7A, 10V
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max):
630mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is NTGS4111PT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 15.25 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. It provides up to 110 mω maximum drain source resistance. The package is a sort of tsop. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration. Base Part Number: ntgs4111. It features p-channel 30v 2.6a (ta) 630mw (ta) surface mount 6-tsop. The product's input capacitance at maximum includes 750pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 32nc @ 10v. It has a maximum Rds On and voltage of 60mohm @ 3.7a, 10v. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The product carries maximum power dissipation 630mw (ta). The continuous current drain at 25°C is 2.6a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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