Maximum Continuous Drain Current:
185 A
Width:
5.1mm
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
4 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
106 W
Series:
NTMFS5C430N
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.7 mΩ
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 40V 35A (Ta), 185A (Tc) 3.8W (Ta), 106W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS5
Gate Charge (Qg) (Max) @ Vgs:
47nC @ 10V
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3300pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
35A (Ta), 185A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 106W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS5C430NT1G. While 185 a of maximum continuous drain current. Furthermore, the product is 5.1mm wide. It has a maximum of 40 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of dfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 47 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.1mm. It contains 4 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 106 w maximum power dissipation. The product ntmfs5c430n, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.7 mω maximum drain source resistance. It has typical 26 weeks of manufacturer standard lead time. It features n-channel 40v 35a (ta), 185a (tc) 3.8w (ta), 106w (tc) surface mount 5-dfn (5x6) (8-sofl). The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. Base Part Number: ntmfs5. The maximum gate charge and given voltages include 47nc @ 10v. It has a maximum Rds On and voltage of 1.7mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3300pf @ 25v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 35a (ta), 185a (tc). The product carries maximum power dissipation 3.8w (ta), 106w (tc). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.