Maximum Continuous Drain Current:
12.2 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Priced to Clear:
Yes
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
3V
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.5 mΩ
Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 30V 9.1A (Ta) 860mW (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
NTMS4807
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 4.5V
Rds On (Max) @ Id, Vgs:
6.1mOhm @ 14.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2900pF @ 24V
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.1A (Ta)
Customer Reference:
Power Dissipation (Max):
860mW (Ta)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is NTMS4807NR2G. While 12.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. Priced to Clear Options - yes. It has a maximum of 30 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7.5 mω maximum drain source resistance. It has typical 2 weeks of manufacturer standard lead time. It features n-channel 30v 9.1a (ta) 860mw (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: ntms4807. The maximum gate charge and given voltages include 24nc @ 4.5v. It has a maximum Rds On and voltage of 6.1mohm @ 14.8a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2900pf @ 24v. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9.1a (ta). The product carries maximum power dissipation 860mw (ta). This product use mosfet (metal oxide) technology.
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