ON Semiconductor MVMBF0201NLT1G
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.4 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
225 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.4V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
1.4 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
300 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MVMBF0201
Detailed Description:
N-Channel 20V 300mA (Ta) 225mW (Ta) Surface Mount SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds:
45pF @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1Ohm @ 300mA, 10V
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
225mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
300mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor MVMBF0201NLT1G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor MVMBF0201NLT1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10891695 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10891695.
Yes. We ship MVMBF0201NLT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MVMBF0201NLT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1.4 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 225 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.4v of maximum gate threshold voltage. In addition, the height is 1.01mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 1.4 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 300 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: mvmbf0201. It features n-channel 20v 300ma (ta) 225mw (ta) surface mount sot-23-3. The product's input capacitance at maximum includes 45pf @ 5v. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It has a maximum Rds On and voltage of 1ohm @ 300ma, 10v. sot-23-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 225mw (ta). The continuous current drain at 25°C is 300ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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