ON Semiconductor NTMFS4927NT1G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
20.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.2V
Height:
1.1mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
12 mΩ
Package Type:
PowerPAK SO
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
38 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 30V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS4927
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
Rds On (Max) @ Id, Vgs:
7.3mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
913pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7.9A (Ta), 38A (Tc)
Customer Reference:
Power Dissipation (Max):
920mW (Ta), 20.8W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. We ship NTMFS4927NT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS4927NT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 20.8 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.2v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 6.1mm wide. Its accurate length is 5.1mm. It provides up to 12 mω maximum drain source resistance. The package is a sort of powerpak so. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 38 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 52 weeks of manufacturer standard lead time. It features n-channel 30v 7.9a (ta), 38a (tc) 920mw (ta), 20.8w (tc) surface mount 5-dfn (5x6) (8-sofl). The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. Base Part Number: ntmfs4927. The maximum gate charge and given voltages include 16nc @ 10v. It has a maximum Rds On and voltage of 7.3mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 913pf @ 15v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7.9a (ta), 38a (tc). The product carries maximum power dissipation 920mw (ta), 20.8w (tc). This product use mosfet (metal oxide) technology.
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