Dimensions:
16.2 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PN
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
60A
Detailed Description:
IGBT Field Stop 650V 60A 300W Through Hole TO-3PN
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 30A
Td (on/off) @ 25°C:
14ns/102ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
87nC
Base Part Number:
FGA30N65
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
35ns
Switching Energy:
716µJ (on), 208µJ (off)
Test Condition:
400V, 30A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
90A
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PN
Packaging:
Tube
Power - Max:
300W
Customer Reference:
This is manufactured by ON Semiconductor. The manufacturer part number is FGA30N65SMD. The given dimensions of the product include 16.2 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 60a. It features igbt field stop 650v 60a 300w through hole to-3pn. Features 2.5v @ 15v, 30a. Td (on/off) value of 14ns/102ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 87nc gate charge. Base Part Number: fga30n65. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 35ns. Provide switching energy up to 716µj (on), 208µj (off). Test condition included 400v, 30a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 300w.
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