ON Semiconductor NGTB50N120FL2WG
Product Information
Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
535 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
100 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
24 Weeks
Current - Collector (Ic) (Max):
100A
Detailed Description:
IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 50A
Td (on/off) @ 25°C:
118ns/282ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
311nC
Base Part Number:
NGTB50
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
256ns
Switching Energy:
4.4mJ (on), 1.4mJ (off)
Test Condition:
600V, 50A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
200A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
535W
Customer Reference:
Checking for live stock
FAQs
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Yes. We ship NGTB50N120FL2WG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB50N120FL2WG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 535 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 100 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 24 weeks of manufacturer standard lead time. The maximum collector current includes 100a. It features igbt trench field stop 1200v 100a 535w through hole to-247. Features 2.2v @ 15v, 50a. Td (on/off) value of 118ns/282ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 311nc gate charge. Base Part Number: ngtb50. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 256ns. Provide switching energy up to 4.4mj (on), 1.4mj (off). Test condition included 600v, 50a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 535w.
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