Infineon Technologies 2ED2109S06FXUMA1
Product Information
The 2ED2109S06FXUMA1 is a high-geared Half-Bridge Gate Driver IC tailored for efficient control and switching of power MOSFETs or IGBTs. Its under-voltage lockout and shoot-through protection is suitable for power conversion and motor drives.
HTSUS:
8542.39.0001
RoHS Status:
ROHS3 Compliant
DigiKey Programmable:
Not Verified
Operating Temperature:
-40°C ~ 125°C (TA)
Input Type:
Non-Inverting
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Current - Peak Output (Source, Sink):
290mA, 700mA
Rise / Fall Time (Typ):
100ns, 35ns
REACH Status:
REACH Unaffected
edacadModel:
2ED2109S06FXUMA1 Models
edacadModelUrl:
/en/models/10822735
Gate Type:
IGBT, N-Channel MOSFET
Package:
Tape & Reel (TR)
Channel Type:
Synchronous
Moisture Sensitivity Level (MSL):
2 (1 Year)
High Side Voltage - Max (Bootstrap):
650 V
Logic Voltage - VIL, VIH:
1.1V, 1.7V
standardLeadTime:
16 Weeks
Driven Configuration:
Half-Bridge
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PG-DSO-8-53
Number of Drivers:
1
Voltage - Supply:
10V ~ 20V
Base Product Number:
2ED2109
ECCN:
EAR99
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The Infineon Technologies 2ED2109S06FXUMA1 is a high-geared Half-Bridge Gate Driver IC built for power electronics applications. This non-inverting IC provides efficient control and switching of power MOSFETs or IGBTs in half-bridge configurations. It is created for half-bridge topologies, making it well-suited for numerous power conversion and motor drive applications.
The 2ED2109S06FXUMA1 is tailored for non-inverting half-bridge configurations, where an external signal controls one leg of the bridge while the gate driver complements the other leg. This configuration allows for efficient and synchronous operation of power switches.
The gate driver is engineered for high-speed switching, enabling efficient power conversion and minimising switching losses. Its precise control over power switches enhances system performance and overall power efficiency.
The 2ED2109S06FXUMA1 is offered in a PG-DSO-8-53 package, providing a compact and reliable solution for surface-mount applications. The package's thermal characteristics contribute to the IC's ability to handle high-power applications.
With its high current handling capability, the 2ED2109S06FXUMA1 can effectively drive power MOSFETs and IGBTs with low switching times and reduced voltage overshoots.
The driver comes with integrated features such as under-voltage lockout (UVLO) and shoot-through protection, ensuring the safe and reliable operation of the power switches.
The Infineon Technologies 2ED2109S06FXUMA1: Wide Application Range
The Infineon Technologies 2ED2109S06FXUMA1 gate driver finds applications in diverse industries, including:
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