Toshiba Semiconductor and Storage SSM14N956L,EFF

Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.4V @ 1.57mA
Operating Temperature:
150°C
Package / Case:
14-SMD, No Lead
Rds On (Max) @ Id, Vgs:
1.35mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
76nC @ 4V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SSM14N956L,EFF Models
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
edacadModelUrl:
/en/models/19235982
Configuration:
2 N-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
standardLeadTime:
20 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TCSPED-302701
Power - Max:
1.33W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM14
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM14N956L,EFF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.4v @ 1.57ma. The product has 150°c operating temperature range. Moreover, the product comes in 14-smd, no lead. It has a maximum Rds On and voltage of 1.35mohm @ 10a, 4.5v. The maximum gate charge and given voltages include 76nc @ 4v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 20a (ta). The product is available in 2 n-channel configuration. It is shipped in tape & reel (tr) package . The product has a 12v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. The product is available in surface mount configuration. tcsped-302701 is the supplier device package value. The maximum power of the product is 1.33w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm14, a base product number of the product. The product is designated with the ear99 code number.

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