Goford Semiconductor G800N06S2

G800N06S2 Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
Standard
HTSUS:
8541.29.0000
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
80mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 10V
RoHS Status:
RoHS Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Configuration:
2 N-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Input Capacitance (Ciss) (Max) @ Vds:
458pF @ 30V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOP
Power - Max:
1.7W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is G800N06S2. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0000. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 80mohm @ 3a, 10v. The maximum gate charge and given voltages include 6nc @ 10v. The product is rohs compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 3a (tc). The product is available in 2 n-channel configuration. It is shipped in tape & reel (tr) package . The product has a 60v drain to source voltage. The product's input capacitance at maximum includes 458pf @ 30v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 8-sop is the supplier device package value. The maximum power of the product is 1.7w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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G800N06S2(Datasheets)

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