FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Gate Charge (Qg) (Max) @ Vgs:
23nC @ 10V, 51nC @ 10V
Rds On (Max) @ Id, Vgs:
22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
850pF @ 10V, 1200pF @ 10V
standardLeadTime:
27 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-TSSOP
Power - Max:
1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI6562
ECCN:
EAR99
