NXP USA Inc. PMDPB70EN,115
Product Information
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
57mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
4.5nC @ 10V
RoHS Status:
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C:
3.5A
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
30V
Input Capacitance (Ciss) (Max) @ Vds:
130pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-HUSON (2x2)
Power - Max:
510mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMDPB70
ECCN:
EAR99
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Yes. We ship PMDPB70EN,115 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is PMDPB70EN,115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. It has a maximum Rds On and voltage of 57mohm @ 3.5a, 10v. The maximum gate charge and given voltages include 4.5nc @ 10v. The product is rohs3 compliant. The continuous current drain at 25°C is 3.5a. The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 30v drain to source voltage. The product's input capacitance at maximum includes 130pf @ 15v. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 510mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmdpb70, a base product number of the product. The product is designated with the ear99 code number.
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