Fairchild Semiconductor FDM2509NZ
Product Information
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 4.5V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
18mOhm @ 8.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C:
8.7A
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
20V
Input Capacitance (Ciss) (Max) @ Vds:
1200pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
MicroFET 2x2 Thin
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDM2509
ECCN:
EAR99
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FAQs
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Yes. Our products in FET, MOSFET Arrays category are shipped in lowest possible time.
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Yes. We ship FDM2509NZ Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDM2509NZ. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. The maximum gate charge and given voltages include 17nc @ 4.5v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 18mohm @ 8.7a, 4.5v. The continuous current drain at 25°C is 8.7a. The product is available in 2 n-channel (dual) configuration. It is shipped in bulk package . The product has a 20v drain to source voltage. The product's input capacitance at maximum includes 1200pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. microfet 2x2 thin is the supplier device package value. The maximum power of the product is 800mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdm2509, a base product number of the product. The product is designated with the ear99 code number.
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