FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V, 46.7nC @ 10V
REACH Status:
Vendor Undefined
Current - Continuous Drain (Id) @ 25°C:
23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Configuration:
2 N-Channel (Dual), Schottky
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
790pF @ 15V, 2130pF @ 15V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
8-PowerPair® (6x5)
Power - Max:
3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZ998
ECCN:
EAR99
